PART |
Description |
Maker |
RJK0381DPA RJK0381DPA-00-J5A RJK0381DPA13 |
Built in SBD N Channel Power MOS High Speed Power Switching
|
Renesas Electronics Corporation
|
RJK0380DPA RJK0380DPA-00-J5A |
Built in SBD N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
RJK03P9DPA-00-J5A |
Built in SBD Dual N-channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
RJK03P6DPA RJK03P6DPA-00-J5A |
Built in SBD Dual N-channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
RJK03N5DPA |
30V, 45A, 2.9m max. Built in SBD N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
MCH5810 |
Pch SBD MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode DC / DC Converter Applications
|
Sanyo Semicon Device
|
MCH5818 |
Pch SBD MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode
|
Sanyo Semicon Device
|
CPH5824 |
MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications MOSFET的:N沟道MOSFET的硅SBD智能交通:肖特基二极管通用开关器件应 Nch SBD
|
Sanyo Electric Co., Ltd. Sanyo Semicon Device
|
PU7457 |
Silicon N-Channel Power F-MOS FET (with built-in zener diode)
|
Panasonic Semiconductor
|
D4SBS6 |
Schottky Rectifiers (SBD) / SBD Bridges
|
Shindengen
|
PU7457 PUB4753PU7457 |
PUB4753 (PU7457) - N-Channel Power F-MOS FET (with built-in zener diode) Power Transistor Arrays (F-MOS FETs)
|
Matsshita / Panasonic
|
SF15SC4 |
Schottky Rectifiers (SBD) / Center Tap, Common Cathode (Three Terminal Type) SCHOTTKY RECTIFIER (SBD)
|
SHINDENGEN[Shindengen Electric Mfg.Co.Ltd]
|